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Πεδίο DCΤιμήΓλώσσα
dc.contributor.authorAivali, Stefania-
dc.contributor.authorYuan, Peisen-
dc.contributor.authorPanidi, Julianna-
dc.contributor.authorGeorgiadou, Dimitra G.-
dc.contributor.authorProdromakis, Themis-
dc.contributor.authorKallitsis, Joannis K-
dc.contributor.authorKeivanidis, Panagiotis E.-
dc.contributor.authorAndreopoulou, Aikaterini K.-
dc.date.accessioned2022-02-07T12:26:22Z-
dc.date.available2022-02-07T12:26:22Z-
dc.date.issued2022-01-25-
dc.identifier.citationMacromolecules, 2022, vol. 55, no. 2, pp. 672−683en_US
dc.identifier.issn15205835-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/23914-
dc.description.abstractA route toward processable n-type terpolymers is presented herein based on the random donor-acceptor-donor-acceptor (D-A1)-(D-A2) molecular configuration. Carbazole is utilized as the electron donating unit (D) combined with perylene diimide (PDI) as the first electron acceptor (A1) and either one of two different benzothiadiazole (BTZ) derivatives (di-thienyl substituted-BTZ and di-3,4-ethylenedioxythienyl substituted-BTZ) as the second electron accepting unit (A2). Increasing the content of the PDI co-monomer resulted in terpolymers of higher molecular weights, enhanced solubility, and stronger n-type character. The physicochemical properties of the random PDI-Cz-BTZ derivatives are fine-tuned based on the feed ratio of the co-monomers. Photodiode devices were demonstrated, having photoactive layers composed of the rich in PDI terpolymer, namely, P4 having a 75% PDI content, and the PCE10 electron donor, under various ratios. For a range of P4 blend compositions, UV-Vis, is spectroscopy confirmed the strong absorption of the blend films across the 350-800 nm spectral region, and AFM imaging verified their low surface roughness. The study of the electro-optical device properties identified the 1:2 blending ratio as the optimum PCE10:P4 combination for maximum charge photogeneration efficiency. Despite the relatively deep LUMO energy of the n-type P4 terpolymer (ELUMO = -4.04 eV), trap-induced charge recombination losses were found to limit the PCE10:P4 photodiode performance. Unipolar devices of the P4-alone exhibited hole and electron mobility values of 2.2 × 10-4 and 6.3 × 10-5 cm2 V-1 s-1, respectively.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofMacromoleculesen_US
dc.rights© American Chemical Societyen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectAcceptoren_US
dc.subjectOrganic solar cellsen_US
dc.subjectLow bandgap polymersen_US
dc.subjectNaphthalene diimideen_US
dc.subjectPerylene diimideen_US
dc.subjectElectron acceptoren_US
dc.titleElectron Transporting Perylene Diimide-Based Random Terpolymers with Variable Co-Monomer Feed Ratio: A Route to All-Polymer-Based Photodiodesen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationUniversity of Patrasen_US
dc.collaborationUniversity of Southamptonen_US
dc.collaborationUniversite Lavalen_US
dc.collaborationNanoscience Cooperative Research Centeren_US
dc.subject.categoryChemical Sciencesen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.countryGreeceen_US
dc.countryUnited Kingdomen_US
dc.countryCanadaen_US
dc.countrySpainen_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1021/acs.macromol.1c02159en_US
dc.identifier.scopus2-s2.0-85122797984-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85122797984-
dc.relation.issue2en_US
dc.relation.volume55en_US
cut.common.academicyear2021-2022en_US
dc.identifier.spage672en_US
dc.identifier.epage683en_US
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.journal.journalissn1520-5835-
crisitem.journal.publisherAmerican Chemical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-5336-249X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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