Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/19922
DC FieldValueLanguage
dc.contributor.authorPapagiorgis, Paris-
dc.contributor.authorTsokkou, Demetra-
dc.contributor.authorKushagra, Gahlot-
dc.contributor.authorProtesescu, Loredana-
dc.contributor.authorManoli, Andreas-
dc.contributor.authorHermerschmidt, Felix-
dc.contributor.authorChristodoulou, Constantinos-
dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorKovalenko, Maksym V.-
dc.contributor.authorOthonos, Andreas S.-
dc.contributor.authorItskos, Grigorios-
dc.date.accessioned2021-02-16T10:10:33Z-
dc.date.available2021-02-16T10:10:33Z-
dc.date.issued2020-
dc.identifier.citationThe Journal of Physical Chemistry C, 2020, vol. 124. no. 50, pp. 27848–27857en_US
dc.identifier.issn19327447-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/19922-
dc.description.abstractColloidal quantum dots (CQDs) are typically decorated with organic molecules that provide surface passivation and colloidal solubility. An alternate but less studied surface functionalization approach via inorganic complexes can produce stable CQDs with attractive transport and optical properties. Further development of such all-inorganic CQD solids is dependent on the deeper understanding of the energetic and dynamic interactions of the new ligands with the CQD excitons. Herein, a series of four metal chalcogenide (MCC) ligands of the KzXS4 type were attached to PbS CQDs. Out of the four MCC complexes studied, we find that only K4GeS4 ligands yield robust PbS CQD films with bright photoluminescence (PL) in the solid state. A systematic spectroscopic investigation of the K4GeS4-capped CQD films provides evidence of the temperature-dependent ligand-mediated exciton delocalization and trapping processes. At low temperatures, efficient trapping at ligand-induced states is found to occur within ∼6 ns after photoexcitation, followed by a considerably slower exciton back transfer to the CQD core. At elevated temperatures, the CQD films become photoconductive, providing evidence of exciton dissociation via carrier transfer within adjacent dots. The addition of a thin CdS shell suppresses the delocalization and trapping of excitons, resulting in brighter emission and significantly slower transient absorption and PL dynamics.en_US
dc.language.isoenen_US
dc.relation.ispartofThe Journal of Physical Chemistry Cen_US
dc.rights© American Chemical Societyen_US
dc.subjectColloidal quantum dotsen_US
dc.subjectSurface passivationen_US
dc.subjectColloidal solubilityen_US
dc.subjectSpectroscopic investigationen_US
dc.titleExciton–Ligand Interactions in PbS Quantum Dots Capped with Metal Chalcogenidesen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationInstitute of Inorganic Chemistryen_US
dc.collaborationUniversity of Groningenen_US
dc.subject.categoryElectrical Engineering - Electronic Engineering - Information Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1021/acs.jpcc.0c09790en_US
dc.relation.issue50en_US
dc.relation.volume125en_US
cut.common.academicyear2020-2021en_US
dc.identifier.external84579121-
dc.identifier.spage27848en_US
dc.identifier.epage27857en_US
item.grantfulltextnone-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.fulltextNo Fulltext-
crisitem.journal.journalissn1932-7455-
crisitem.journal.publisherAmerican Chemical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0001-9898-261X-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
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