Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1850
DC FieldValueLanguage
dc.contributor.authorHadjisavvas, George C.-
dc.contributor.authorKelires, Pantelis C.-
dc.date.accessioned2010-02-18T07:12:22Zen
dc.date.accessioned2013-05-17T05:21:46Z-
dc.date.accessioned2015-12-02T09:49:58Z-
dc.date.available2010-02-18T07:12:22Zen
dc.date.available2013-05-17T05:21:46Z-
dc.date.available2015-12-02T09:49:58Z-
dc.date.issued2007-04-
dc.identifier.citationPhysica E: Low-Dimensional Systems and Nanostructures, vol. 38, no. 1-2, pp. 99-105.en_US
dc.identifier.issn13869477-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1850-
dc.description.abstractWe examine the interrelation of the structural and bonding alterations, when Si nanocrystals are embedded in amorphous silicon dioxide, with the electronic properties of the resulting nanocomposite system. Monte Carlo simulations using a valence force-field model obtain the equilibrium structure of the interface, and investigate its energetics, stability and disorder as a function of the nanocrystal size. It is found that when the size is smaller than 2 nm, the embedded nanocrystals get heavily distorted. First-principles calculations of such small nanocrystals reveal a drastic reduction of the energy gap compared to the free-standing case. The origin of this pinning is attributed to the structural deformations, while oxygen states at the interface seem to play a minor role.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysica E: Low-Dimensional Systems and Nanostructuresen_US
dc.rights© Elsevieren_US
dc.subjectSilicon nanocrystalsen_US
dc.subjectSilicon dioxideen_US
dc.subjectInterface structureen_US
dc.subjectEnergeticsen_US
dc.subjectElectronic propertiesen_US
dc.subjectAb initio calculationsen_US
dc.titleTheory of interface structure, energetics, and electronic properties of embedded Si/a-SiO2 nanocrystalsen_US
dc.typeArticleen_US
dc.collaborationUniversity of Creteen_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1016/j.physe.2006.12.009en_US
dc.dept.handle123456789/54en
dc.relation.issue1-2en_US
dc.relation.volume38en_US
cut.common.academicyear2007-2008en_US
dc.identifier.spage99en_US
dc.identifier.epage105en_US
item.grantfulltextnone-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.fulltextNo Fulltext-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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