Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1836
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kelaidis, N. | - |
dc.contributor.author | Ioannou-Sougleridis, Vassilios | - |
dc.contributor.author | Tsamis, Christos | - |
dc.contributor.author | Krontiras, Christoforos A. | - |
dc.contributor.author | Georga, Stavroula N. | - |
dc.contributor.author | Kellerman, Bruce K. | - |
dc.contributor.author | Seacrist, Mike R. | - |
dc.contributor.author | Skarlatos, Dimitrios | - |
dc.date.accessioned | 2009-12-21T12:14:55Z | en |
dc.date.accessioned | 2013-05-17T05:21:47Z | - |
dc.date.accessioned | 2015-12-02T09:49:02Z | - |
dc.date.available | 2009-12-21T12:14:55Z | en |
dc.date.available | 2013-05-17T05:21:47Z | - |
dc.date.available | 2015-12-02T09:49:02Z | - |
dc.date.issued | 2008-11-03 | - |
dc.identifier.citation | Thin Solid Films, 2008, vol. 517, iss. 1, pp. 350-352 | en_US |
dc.identifier.issn | 00406090 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/1836 | - |
dc.description.abstract | In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 − xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Thin Solid Films | en_US |
dc.rights | © Elsevier | en_US |
dc.subject | Strained-Silicon | en_US |
dc.subject | Oxidation | en_US |
dc.subject | Thermal budget | en_US |
dc.subject | Oxynitridation | en_US |
dc.title | Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates | en_US |
dc.type | Article | en_US |
dc.affiliation | University of Patras | en |
dc.collaboration | IMEL/NCSR Demokritos | en_US |
dc.collaboration | University of Patras | en_US |
dc.collaboration | MEMC Electronic Materials | en_US |
dc.subject.category | Physical Sciences | en_US |
dc.subject.category | Electrical Engineering - Electronic Engineering - Information Engineering | en_US |
dc.journals | Subscription | en_US |
dc.country | Greece | en_US |
dc.subject.field | Natural Sciences | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1016/j.tsf.2008.08.111 | en_US |
dc.dept.handle | 123456789/54 | en |
dc.relation.issue | 1 | en_US |
dc.relation.volume | 517 | en_US |
cut.common.academicyear | 2008-2009 | en_US |
dc.identifier.spage | 350 | en_US |
dc.identifier.epage | 352 | en_US |
item.openairetype | article | - |
item.cerifentitytype | Publications | - |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.languageiso639-1 | en | - |
crisitem.author.dept | Department of Civil Engineering and Geomatics | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-2732-4780 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
crisitem.journal.journalissn | 0040-6090 | - |
crisitem.journal.publisher | Elsevier | - |
Appears in Collections: | Άρθρα/Articles |
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