Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1836
DC FieldValueLanguage
dc.contributor.authorKelaidis, N.-
dc.contributor.authorIoannou-Sougleridis, Vassilios-
dc.contributor.authorTsamis, Christos-
dc.contributor.authorKrontiras, Christoforos A.-
dc.contributor.authorGeorga, Stavroula N.-
dc.contributor.authorKellerman, Bruce K.-
dc.contributor.authorSeacrist, Mike R.-
dc.contributor.authorSkarlatos, Dimitrios-
dc.date.accessioned2009-12-21T12:14:55Zen
dc.date.accessioned2013-05-17T05:21:47Z-
dc.date.accessioned2015-12-02T09:49:02Z-
dc.date.available2009-12-21T12:14:55Zen
dc.date.available2013-05-17T05:21:47Z-
dc.date.available2015-12-02T09:49:02Z-
dc.date.issued2008-11-03-
dc.identifier.citationThin Solid Films, 2008, vol. 517, iss. 1, pp. 350-352en_US
dc.identifier.issn00406090-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1836-
dc.description.abstractIn this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 − xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.rights© Elsevieren_US
dc.subjectStrained-Siliconen_US
dc.subjectOxidationen_US
dc.subjectThermal budgeten_US
dc.subjectOxynitridationen_US
dc.titleInfluence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substratesen_US
dc.typeArticleen_US
dc.affiliationUniversity of Patrasen
dc.collaborationIMEL/NCSR Demokritosen_US
dc.collaborationUniversity of Patrasen_US
dc.collaborationMEMC Electronic Materialsen_US
dc.subject.categoryPhysical Sciencesen_US
dc.subject.categoryElectrical Engineering - Electronic Engineering - Information Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1016/j.tsf.2008.08.111en_US
dc.dept.handle123456789/54en
dc.relation.issue1en_US
dc.relation.volume517en_US
cut.common.academicyear2008-2009en_US
dc.identifier.spage350en_US
dc.identifier.epage352en_US
item.openairetypearticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.languageiso639-1en-
crisitem.author.deptDepartment of Civil Engineering and Geomatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-2732-4780-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn0040-6090-
crisitem.journal.publisherElsevier-
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