Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1769
Title: | Modeling of the carbon-rich c(4 × 4) reconstruction on si(1 0 0) |
Authors: | Remediakis, Ioannis N. Guedj, Cyril Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής |
Major Field of Science: | Engineering and Technology |
Field Category: | Mechanical Engineering |
Keywords: | Silicon carbide;Carbon;Computer simulation;Mathematical models;Silicon carbide |
Issue Date: | 10-Apr-2004 |
Source: | Surface Science, 2004, vol. 554, no. 2-3, pp. 90-102 |
Volume: | 554 |
Issue: | 2-3 |
Start page: | 90 |
End page: | 102 |
Journal: | Surface Science |
Abstract: | The structure and energetics of the carbon-rich c(4×4) surface reconstruction on Si(0 0 1) is studied theoretically. These combined analyses demonstrate that for five or six carbon atoms per c(4×4) unit cell, the configuration involving carbon atoms in second nearest-neighbor positions in subsurface sites is more stable than the first nearest-neighbor configuration, involving a C-C dimer and a missing Si dimer. This SiC-like configuration could account for the formation of 3C-SiC precipitates generally observed during the growth of Si-C alloys for high C concentrations (>3%) and at high temperatures (>650°C). |
URI: | https://hdl.handle.net/20.500.14279/1769 |
ISSN: | 00396028 |
DOI: | 10.1016/j.susc.2004.02.016 |
Rights: | © Elsevier Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article |
Affiliation: | University of Crete |
Affiliation : | University of Crete Foundation for Research & Technology-Hellas (F.O.R.T.H.) |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
CORE Recommender
This item is licensed under a Creative Commons License