1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Άρθρα/Articles
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1631
DC FieldValueLanguage
dc.contributor.authorKalli, Kyriacos-
dc.contributor.authorOthonos, Andreas S.-
dc.contributor.authorChristofidès, Constantinos-
dc.contributor.otherΚαλλή, Κυριάκος-
dc.date.accessioned2013-02-21T13:53:26Zen
dc.date.accessioned2013-05-17T05:22:26Z-
dc.date.accessioned2015-12-02T10:02:28Z-
dc.date.available2013-02-21T13:53:26Zen
dc.date.available2013-05-17T05:22:26Z-
dc.date.available2015-12-02T10:02:28Z-
dc.date.issued2002-03-15-
dc.identifier.citationJournal of Applied Physics, 2002, vol. 91, no. 6, pp. 3829-3840en_US
dc.identifier.issn10897550-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1631-
dc.description.abstractOptically thin palladium metal films evaporated on different silicon based substrates are investigated following exposure to different concentrations of hydrogen gas in air. Laser modulated reflectance off the palladium surface of silicon oxide and silicon nitride substrates is used to recover information regarding the reflectivity inversion and α/β-phases of the palladium complex after both first and multiple gas cycling. Atomic force microscopy confirms the formation of metal nanostructures following exposure to hydrogen of the optically thin palladium films.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rights© 2002 American Institute of Physics.en_US
dc.subjectHydrogenen_US
dc.subjectPalladiumen_US
dc.subjectSiliconen_US
dc.subjectNanostructured materialsen_US
dc.titleCharacterization of reflectivity inversion, α- and β-phase transitions and nanostructure formation in hydrogen activated thin pd films on silicon based substratesen_US
dc.typeArticleen_US
dc.collaborationUniversity of Cyprusen_US
dc.subject.categoryPhysical Sciencesen_US
dc.journalsSubscription Journalen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.1417992en_US
dc.dept.handle123456789/54en
cut.common.academicyear2001-2002en_US
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypearticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextNo Fulltext-
item.grantfulltextnone-
crisitem.journal.journalissn1089-7550-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-4541-092X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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