Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1594
DC FieldValueLanguage
dc.contributor.authorSegall, Benjamin-
dc.contributor.authorLee, Choon H.-
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.otherΚελίρης, Παντελής-
dc.date.accessioned2013-03-06T16:32:09Zen
dc.date.accessioned2013-05-17T05:22:41Z-
dc.date.accessioned2015-12-02T10:01:13Z-
dc.date.available2013-03-06T16:32:09Zen
dc.date.available2013-05-17T05:22:41Z-
dc.date.available2015-12-02T10:01:13Z-
dc.date.issued1994-
dc.identifier.citationPhysical Review B,1994, vol. 49, no. 16, pp. 11448-11451en_US
dc.identifier.issn24699969-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1594-
dc.description.abstractThe tight-binding method is used to calculate the electronic densities of states of various models of a-C. Both models generated using Tersoff's potential and quantum mechanically derived forces show π and π* states in the σ gap in agreement with experimental data. The former models, however, have an additional large peak at the Fermi level, which is shown to derive mainly from misoriented pπ orbitals and dangling bonds. The models do not support the presence of large aromatic ring structures. We find that embedding the local π electron systems of small clusters in the rigid sp3 network leads to reduced level splittings and is thus consistent with the observed small optical gaps ≤2.5 eV.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rights© American Physical Societyen_US
dc.subjectElectronic structureen_US
dc.subjectQuantum mechanicsen_US
dc.subjectCarbonen_US
dc.titleElectronic structure of dense amorphous carbonen_US
dc.typeArticleen_US
dc.affiliationUniversity of Creteen
dc.collaborationCase Western Reserve Universityen_US
dc.collaborationUniversity of Creteen_US
dc.collaborationTechnical University of Chemnitzen_US
dc.journalsHybrid Open Accessen_US
dc.countryUnited Statesen_US
dc.countryGreeceen_US
dc.countryGermanyen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1103/PhysRevB.49.11448en_US
dc.dept.handle123456789/54en
dc.relation.issue16en_US
dc.relation.volume49en_US
cut.common.academicyear1995-1996en_US
dc.identifier.spage11448en_US
dc.identifier.epage11451en_US
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.languageiso639-1en-
crisitem.journal.journalissn2469-9969-
crisitem.journal.publisherAmerican Physical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Άρθρα/Articles
CORE Recommender
Show simple item record

SCOPUSTM   
Citations

55
checked on Nov 9, 2023

WEB OF SCIENCETM
Citations 50

54
Last Week
0
Last month
0
checked on Nov 1, 2023

Page view(s) 20

473
Last Week
1
Last month
9
checked on May 13, 2024

Google ScholarTM

Check

Altmetric


Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.