Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1556
Title: | A constrained-equilibrium Monte Carlo method for quantum dots - the problem of intermixing |
Authors: | Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής |
Major Field of Science: | Natural Sciences |
Field Category: | Computer and Information Sciences |
Keywords: | Chemical bonds;Computer simulation;Depositions;Optoelectronic devices;Diffusion |
Issue Date: | 5-May-2004 |
Source: | Journal of Physics Condensed Matter, 2004, vol. 16, no. 17, pp. S1485-S1501 |
Volume: | 16 |
Issue: | 17 |
Start page: | S1485 |
End page: | S1501 |
Journal: | Journal of Physics: Condensed Matter |
Abstract: | Islands grown during semiconductor heteroepitaxy are in a thermodynamically metastable state. Experiments show that diffusion at the surface region, including the interior of the islands, is fast enough to establish local equilibrium. I review here applications of a Monte Carlo method which takes advantage of the quasi-equilibrium nature of quantum dots and is able to address the issue of intermixing and island composition. Both, Ge islands grown on the bare Si(100) surface and C-induced Ge islands grown on Si(100) precovered with C are discussed. In the bare case, the interlinking of the stress field with the composition is revealed. Both are strongly inhomogeneous. In the C-induced case, the interplay of strain and chemical effects is the dominant key factor. Islands do not contain C under any conditions of coverage and temperature. |
URI: | https://hdl.handle.net/20.500.14279/1556 |
ISSN: | 1361648X |
DOI: | 10.1088/0953-8984/16/17/004 |
Rights: | © Institute of Physics |
Type: | Article |
Affiliation: | University of Crete |
Affiliation : | University of Crete |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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