Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1521
DC FieldValueLanguage
dc.contributor.authorSonnet, Philippe-
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.otherΚελίρης, Παντελής-
dc.date.accessioned2013-03-04T09:16:54Zen
dc.date.accessioned2013-05-17T05:22:49Z-
dc.date.accessioned2015-12-02T10:07:39Z-
dc.date.available2013-03-04T09:16:54Zen
dc.date.available2013-05-17T05:22:49Z-
dc.date.available2015-12-02T10:07:39Z-
dc.date.issued2004-03-04-
dc.identifier.issn10773118-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1521-
dc.description.abstractThe physical origin of trench formation in Ge/Si (100) islands was discussed using Monte Carlo simulations. The stress evolution as the island grows layer by layer indicted that a trench was most likely being formed halfway during growth. It was found that the primary driving force for this phenomenon was the reduction of the concentrated stress below the edges of the islands. Analysis shows that once the trench is formed subsequent intermixing through it is enhanced and nearly compensates for the stress in the island.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.rights© American Institute of Physics.en_US
dc.subjectSiliconen_US
dc.subjectWettingen_US
dc.subjectGermaniumen_US
dc.titlePhysical origin of trench formation in ge/si(100) islandsen_US
dc.typeArticleen_US
dc.affiliationUniversity of Creteen
dc.collaborationUniversity of Creteen_US
dc.subject.categoryMechanical Engineeringen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.identifier.doi10.1063/1.1771452en_US
dc.dept.handle123456789/54en
cut.common.academicyear2020-2021en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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