Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1477
Title: Strain fields in diamondlike amorphous carbon
Authors: Kelires, Pantelis C. 
metadata.dc.contributor.other: Κελίρης, Παντελής
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Carbon;Silicon;Hybridization;Diffusion
Issue Date: 2000
Source: International Journal of Modern Physics B, 2000, vol. 14, no. 2-3, pp. 256-267
Volume: 14
Issue: 2-3
Start page: 256
End page: 267
Journal: International Journal of Modern Physics B 
Abstract: This paper reviews the fundamental ideas related to the concept of local atomic stresses and their application to the study of strain fields in ta-C. The calculations are based on Monte Carlo simulations within the empirical potential approach. We find that the stress distributions in ta-C are highly inhomogeneous, both in the bulk as well as in the surface and interface regions. There is a close relationship between local stress and hybridization. The most probable stress state for fourfold sites is compression, while threefold sites prefer to be under tension. Local-atomic behavior dominates longer-ranged stress conditions. Interdiffusion following thermal annealing is an important factor for the reduction of compressive stress in ta-C films grown on silicon substrates.
URI: https://hdl.handle.net/20.500.14279/1477
ISSN: 02179792
DOI: 10.1142/S021797920000025X
Rights: © World Scientific
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: University of Crete 
Affiliation : University of Crete 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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