Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1477
Title: | Strain fields in diamondlike amorphous carbon | Authors: | Kelires, Pantelis C. | metadata.dc.contributor.other: | Κελίρης, Παντελής | Major Field of Science: | Engineering and Technology | Field Category: | Mechanical Engineering | Keywords: | Carbon;Silicon;Hybridization;Diffusion | Issue Date: | 2000 | Source: | International Journal of Modern Physics B, 2000, vol. 14, no. 2-3, pp. 256-267 | Volume: | 14 | Issue: | 2-3 | Start page: | 256 | End page: | 267 | Journal: | International Journal of Modern Physics B | Abstract: | This paper reviews the fundamental ideas related to the concept of local atomic stresses and their application to the study of strain fields in ta-C. The calculations are based on Monte Carlo simulations within the empirical potential approach. We find that the stress distributions in ta-C are highly inhomogeneous, both in the bulk as well as in the surface and interface regions. There is a close relationship between local stress and hybridization. The most probable stress state for fourfold sites is compression, while threefold sites prefer to be under tension. Local-atomic behavior dominates longer-ranged stress conditions. Interdiffusion following thermal annealing is an important factor for the reduction of compressive stress in ta-C films grown on silicon substrates. | URI: | https://hdl.handle.net/20.500.14279/1477 | ISSN: | 02179792 | DOI: | 10.1142/S021797920000025X | Rights: | © World Scientific Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article | Affiliation: | University of Crete | Affiliation : | University of Crete | Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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