1. Ktisis Cyprus University of Technology
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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1460
DC FieldValueLanguage
dc.contributor.authorLeifeld, Oliver-
dc.contributor.authorGrützmacher, Detlev A.-
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.otherΚελίρης, Παντελής-
dc.date.accessioned2013-03-05T10:15:20Zen
dc.date.accessioned2013-05-17T05:22:40Z-
dc.date.accessioned2015-12-02T10:05:36Z-
dc.date.available2013-03-05T10:15:20Zen
dc.date.available2013-05-17T05:22:40Z-
dc.date.available2015-12-02T10:05:36Z-
dc.date.issued1999-02-01-
dc.identifier.citationPhysical Review Letters,1999, vol. 82, no. 5, pp. 972-975en_US
dc.identifier.issn10797114-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1460-
dc.description.abstractThe initial stages of carbon alloying into the Si(001) surface are studied by scanning tunneling microscopy (STM) and density functional theory. Carbon increases the surface roughness compared to the clean surface and induces a c(4 × 4) reconstruction. To explain experimental observations, we propose a novel surface reconstruction model that involves pairing of Si dimers mediated by the presence of a complex of a C dimer and four nearest neighbor subsurface C atoms. The model is backed by total energy and thermal stability simulations. Its calculated surface charge density agrees well with the filled state STM images.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical review lettersen_US
dc.rights© American Physical Societyen_US
dc.subjectCarbonen_US
dc.subjectEnergyen_US
dc.titleDimer pairing on the c-alloyed si(001) surfaceen_US
dc.typeArticleen_US
dc.affiliationUniversity of Creteen
dc.collaborationPaul Scherrer Instituteen_US
dc.collaborationUniversity of Creteen_US
dc.collaborationHarvard Universityen_US
dc.collaborationInstitut de Physique Expérimentaleen_US
dc.journalsHybrid Open Accessen_US
dc.countryGreeceen_US
dc.countryUnited Statesen_US
dc.countrySwitzerlanden_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1103/PhysRevLett.82.972en_US
dc.dept.handle123456789/54en
dc.relation.issue5en_US
dc.relation.volume82en_US
cut.common.academicyear1998-1999en_US
dc.identifier.spage972en_US
dc.identifier.epage975en_US
item.languageiso639-1en-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.openairetypearticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn1079-7114-
crisitem.journal.publisherAmerican Physical Society-
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