Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1429
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dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorChoong, Vi-En-
dc.contributor.authorMathai, Mathew K.-
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-05T12:45:22Zen
dc.date.accessioned2013-05-17T05:22:55Z-
dc.date.accessioned2015-12-02T10:13:06Z-
dc.date.available2013-03-05T12:45:22Zen
dc.date.available2013-05-17T05:22:55Z-
dc.date.available2015-12-02T10:13:06Z-
dc.date.issued2005-07-
dc.identifier.citationApplied physics letters, 2005, vol. 87, no. 11, pp. 1-3en_US
dc.identifier.issn10773118-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1429-
dc.description.abstractWe demonstrate high efficiency organic light-emitting devices by incorporation of a nanoscale interfacial layer between a hole-conducting layer (PEDOT:PSS) and a light-emitting polymer layer (LEP) to improve hole injection. The interfacial layer has appropriate highest occupied molecular orbital level in order to act as a bridge for efficient hole injection from the PEDOT:PSS into the LEP. As an example we have incorporated a suitable interfacial layer into a green-emitting single-layer electrophosphorescent light-emitting diode. Devices with the interfacial layer show a peak efficiency of 41 lm/W, an improvement of more than 25% in their performance over comparable devices without the interfacial layer. The results presented here introduce a novel method to improve hole injection and thus efficiency in organic electroluminescent devicesen_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© American Institute of Physicsen_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.subjectLight emitting diodesen_US
dc.subjectPolymersen_US
dc.subjectElectroluminescenceen_US
dc.titleThe effect of interfacial layer on the performance of organic light-emitting diodesen_US
dc.typeArticleen_US
dc.affiliationOsram Opto Semiconductors, Inc.en
dc.collaborationImperial College Londonen_US
dc.subject.categoryENGINEERING AND TECHNOLOGYen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.2042635en_US
dc.dept.handle123456789/54en
dc.relation.issue11en_US
dc.relation.volume87en_US
cut.common.academicyear2005-2006en_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
item.openairetypearticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.languageiso639-1en-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn1077-3118-
crisitem.journal.publisherAmerican Institute of Physics-
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