Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1422
Title: | Interface modification to improve hole-injection properties in organic electronic devices |
Authors: | Choulis, Stelios A. Choong, Vi-En Patwardhan, Aditee |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. |
Major Field of Science: | Engineering and Technology |
Keywords: | Conducting polymers;Light emitting diodes;Organic electronics;Polyfluorenes |
Issue Date: | 10-Apr-2006 |
Source: | Advanced functional materials, 2006, vol. 16, no. 8, pp. 1075-1080 |
Volume: | 16 |
Issue: | 8 |
Start page: | 1075 |
End page: | 1080 |
Journal: | Advanced Functional Materials |
Abstract: | The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices |
URI: | https://hdl.handle.net/20.500.14279/1422 |
ISSN: | 1616301X |
DOI: | 10.1002/adfm.200500443 |
Rights: | © WILEY-VCH Verlag GmbH & Co. KGaA |
Type: | Article |
Affiliation: | Osram Opto Semiconductors, Inc. |
Affiliation : | Osram Opto Semiconductors, Inc. |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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