Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1416
Title: Stability and interdiffusion at the a-c/si(100) interface
Authors: Logothetidis, Stergios D. 
Gioti, Maria 
Kelires, Pantelis C. 
metadata.dc.contributor.other: Κελίρης, Παντελής
Major Field of Science: Engineering and Technology
Keywords: Ellipsometry;Carbon;Computer simulation;Monte Carlo method
Issue Date: May-1998
Source: Journal of Non-Crystalline Solids, 1998, vol. 227-230, no. part 2, pp. 1113-1117
Volume: 227-230
Issue: part 2
Start page: 1113
End page: 1117
Journal: Journal of Non-Crystalline Solids 
Abstract: Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.
URI: https://hdl.handle.net/20.500.14279/1416
ISSN: 00223093
DOI: 10.1016/S0022-3093(98)00291-9
Rights: © Elsevier
Type: Article
Affiliation: University of Crete 
Affiliation : Aristotle University of Thessaloniki 
University of Crete 
Foundation for Research & Technology-Hellas (F.O.R.T.H.) 
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