Stability and interdiffusion at the a-c/si(100) interface
Journal
Journal of Non-Crystalline Solids
Date Issued
May 1998
DOI
10.1016/S0022-3093(98)00291-9
Abstract
Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.