Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1416
Title: | Stability and interdiffusion at the a-c/si(100) interface |
Authors: | Logothetidis, Stergios D. Gioti, Maria Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής |
Major Field of Science: | Engineering and Technology |
Keywords: | Ellipsometry;Carbon;Computer simulation;Monte Carlo method |
Issue Date: | May-1998 |
Source: | Journal of Non-Crystalline Solids, 1998, vol. 227-230, no. part 2, pp. 1113-1117 |
Volume: | 227-230 |
Issue: | part 2 |
Start page: | 1113 |
End page: | 1117 |
Journal: | Journal of Non-Crystalline Solids |
Abstract: | Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface. |
URI: | https://hdl.handle.net/20.500.14279/1416 |
ISSN: | 00223093 |
DOI: | 10.1016/S0022-3093(98)00291-9 |
Rights: | © Elsevier |
Type: | Article |
Affiliation: | University of Crete |
Affiliation : | Aristotle University of Thessaloniki University of Crete Foundation for Research & Technology-Hellas (F.O.R.T.H.) |
Appears in Collections: | Άρθρα/Articles |
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