Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1415
DC FieldValueLanguage
dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorHosea, Thomas Jeff Cockburn-
dc.contributor.authorTomić, Stanko S.-
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-06T16:53:07Zen
dc.date.accessioned2013-05-17T05:23:00Z-
dc.date.accessioned2015-12-02T10:12:41Z-
dc.date.available2013-03-06T16:53:07Zen
dc.date.available2013-05-17T05:23:00Z-
dc.date.available2015-12-02T10:12:41Z-
dc.date.issued2003-01-30-
dc.identifier.citationPhysica status solidi (B) Basic research, 2003, vol. 235, no. 2, pp. 384-389en_US
dc.identifier.issn15213951-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1415-
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysica status solidi (B) Basic researchen_US
dc.rights© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.subjectQuantum wellsen_US
dc.subjectMaterials scienceen_US
dc.titlePressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wellsen_US
dc.typeArticleen_US
dc.affiliationUniversity of Surreyen
dc.collaborationUnicersity of Surreyen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1002/pssb.200301589en_US
dc.dept.handle123456789/54en
dc.relation.issue2en_US
dc.relation.volume235en_US
cut.common.academicyear2003-2004en_US
dc.identifier.spage384en_US
dc.identifier.epage389en_US
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.journal.journalissn1521-3951-
crisitem.journal.publisherWiley-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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