1. Ktisis Cyprus University of Technology
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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1370
DC FieldValueLanguage
dc.contributor.authorTheodorou, George Os-
dc.contributor.authorTserbak, C.-
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.otherΚελίρης, Παντελής-
dc.date.accessioned2013-03-06T15:41:02Zen
dc.date.accessioned2013-05-17T05:22:59Z-
dc.date.accessioned2015-12-02T10:17:36Z-
dc.date.available2013-03-06T15:41:02Zen
dc.date.available2013-05-17T05:22:59Z-
dc.date.available2015-12-02T10:17:36Z-
dc.date.issued1994-
dc.identifier.citationPhysical Review B,1994, vol. 50, no. 24, pp. 18355-18359en_US
dc.identifier.issn01631829-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1370-
dc.description.abstractA systematic study of structural, electronic, and optical properties of strained Si1-xGex alloys, coherently grown on a Si(001) surface, is presented. We find that for bulk alloys the lattice constant deviates from Vegards law, while for the strained alloys it deviates from the results of elasticity theory. The strained alloys are indirect gap materials, with the minimum of the conduction band appearing in the [100] direction. We present results for the indirect as well as the direct gaps. Finally, we investigate the optical properties of strained alloys and present results for the critical energies as a function of the concentration of Ge in them.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rights© American Physical Society.en_US
dc.subjectAlloysen_US
dc.subjectElectronicsen_US
dc.subjectConduction banden_US
dc.titleStructural, electronic, and optical properties of strained si1-xgex alloysen_US
dc.typeArticleen_US
dc.affiliationUniversity of Creteen
dc.collaborationAristotle University of Thessalonikien_US
dc.collaborationUniversity of Creteen_US
dc.collaborationFoundation for Research & Technology-Hellas (F.O.R.T.H.)en_US
dc.journalsHybrid Open Accessen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1103/PhysRevB.50.18355en_US
dc.dept.handle123456789/54en
dc.relation.issue24en_US
dc.relation.volume50en_US
cut.common.academicyear2020-2021en_US
dc.identifier.spage18355en_US
dc.identifier.epage18359en_US
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.journal.journalissn2469-9969-
crisitem.journal.publisherAmerican Physical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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