1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1353
DC FieldValueLanguage
dc.contributor.authorKaxiras, Efthimios-
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.otherΚελίρης, Παντελής-
dc.date.accessioned2013-03-05T12:52:10Zen
dc.date.accessioned2013-05-17T05:22:55Z-
dc.date.accessioned2015-12-02T10:13:59Z-
dc.date.available2013-03-05T12:52:10Zen
dc.date.available2013-05-17T05:22:55Z-
dc.date.available2015-12-02T10:13:59Z-
dc.date.issued1997-05-05-
dc.identifier.citationPhysical Review Letters,1997, vol. 78, no. 18, pp. 3479-3482en_US
dc.identifier.issn10797114-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1353-
dc.description.abstractWe investigate the structure of carbon enriched thin silicon films which involve large strains, using first-principles total energy calculations and Monte Carlo simulations. We identify the energetically most favored configurations of substitutional carbon atoms in the Si(100) surface layers, and obtain the equilibrium depth profile at various temperatures. The interplay between the reconstruction strain field and the solute-atom interactions leads to complicated structural patterns that are different from related weakly strained systems.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical review lettersen_US
dc.rights© American Physical Society.en_US
dc.subjectCarbonen_US
dc.subjectSiliconen_US
dc.subjectThin filmsen_US
dc.subjectTemperatureen_US
dc.titleEnergetics and equilibrium properties of thin pseudomorphic si1-xcx(100) layers in sien_US
dc.typeArticleen_US
dc.affiliationUniversity of Creteen
dc.collaborationUniversity of Creteen_US
dc.collaborationFoundation for Research & Technology-Hellas (F.O.R.T.H.)en_US
dc.collaborationHarvard Universityen_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.countryUnited Statesen_US
dc.subject.fieldNatural Sciencesen_US
dc.identifier.doi10.1103/PhysRevLett.78.3479en_US
dc.dept.handle123456789/54en
dc.relation.issue18en_US
dc.relation.volume78en_US
cut.common.academicyear1996-1997en_US
dc.identifier.spage3479en_US
dc.identifier.epage3482en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.journal.journalissn1079-7114-
crisitem.journal.publisherAmerican Physical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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