Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/10504
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Savva, Achilleas | - |
dc.contributor.author | Papadas, Ioannis T. | - |
dc.contributor.author | Tsikritzis, Dimitris | - |
dc.contributor.author | Armatas, Gerasimos S. | - |
dc.contributor.author | Kennou, Stella | - |
dc.contributor.author | Choulis, Stelios A. | - |
dc.date.accessioned | 2017-11-15T14:25:59Z | - |
dc.date.available | 2017-11-15T14:25:59Z | - |
dc.date.issued | 2017-10-14 | - |
dc.identifier.citation | Journal of Materials Chemistry A, 2017, vol. 5, no. 38, pp. 20381-20389 | en_US |
dc.identifier.issn | 20507488 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/10504 | - |
dc.description.abstract | We present a solvothermal synthetic route to produce monodisperse CuO nanoparticles (NPs) in the range of 5-10 nm that can be used as a hole selective interfacial layer between indium tin oxide (ITO) and the perovskite active layer for p-i-n perovskite solar cells by spin casting the dispersions at room temperature. The bottom electrode interface modification provided by spherical CuO-NPs at room temperature promotes the formation of high quality perovskite photoactive layers with a large crystal size and strong optical absorption. Furthermore, it is shown that the nanoparticulate nature of the CuO hole transporting interfacial layer can be used to improve light manipulation within the perovskite solar cell device structure. The corresponding p-i-n CH3NH3PbI3-based solar cells show high V-oc values of 1.09 V, which is significantly higher compared to the V-oc values obtained with conventional PEDOT:PSS hole selective contact based perovskite solar cells. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Journal of Materials Chemistry A | en_US |
dc.rights | © Royal Society of Chemistry | en_US |
dc.subject | Inverted organic photovoltaics | en_US |
dc.subject | Lead halide perovskite | en_US |
dc.subject | Hole-Transporting layer | en_US |
dc.subject | High performance | en_US |
dc.subject | Oxide | en_US |
dc.subject | Efficiency | en_US |
dc.subject | Stability | en_US |
dc.subject | Light | en_US |
dc.subject | CUOX | en_US |
dc.subject | CU2O | en_US |
dc.title | Room temperature nanoparticulate interfacial layers for perovskite solar cells via solvothermal synthesis | en_US |
dc.type | Article | en_US |
dc.collaboration | Cyprus University of Technology | en_US |
dc.collaboration | University of Crete | en_US |
dc.collaboration | University of Patras | en_US |
dc.subject.category | Electrical Engineering - Electronic Engineering - Information Engineering | en_US |
dc.journals | Subscription | en_US |
dc.country | Cyprus | en_US |
dc.country | Greece | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1039/c7ta03802j | en_US |
dc.relation.issue | 38 | en_US |
dc.relation.volume | 5 | en_US |
cut.common.academicyear | 2017-2018 | en_US |
dc.identifier.spage | 20381 | en_US |
dc.identifier.epage | 20389 | en_US |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.openairetype | article | - |
crisitem.journal.journalissn | 2050-7496 | - |
crisitem.journal.publisher | Royal Society of Chemistry | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0001-6454-5788 | - |
crisitem.author.orcid | 0000-0002-7899-6296 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
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