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Issue DateTitleAuthor(s)
15-Aug-20243.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State ResistanceMelnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina 
225-Jul-20164.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan