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Issue DateTitleAuthor(s)Journal
111-Oct-20213C-SiC-on-Si MOSFETs: Overcoming Material Technology LimitationsArvanitopoulos, Anastasios ; Antoniou, Marina ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos ; Lophitis, Neophytos IEEE Transactions on Industry Applications 
21-Mar-2020A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier DiodesArvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos IEEE Journal of Emerging and Selected Topics in Power Electronics