Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33225
DC FieldValueLanguage
dc.contributor.authorPerkins, S.-
dc.contributor.authorArvanitopoulos, A.-
dc.contributor.authorGyftakis, K. N.-
dc.contributor.authorLophitis, Neophytos-
dc.date.accessioned2024-11-29T07:35:04Z-
dc.date.available2024-11-29T07:35:04Z-
dc.date.issued2017-
dc.identifier.citationIEEE 5th Workshop on Wide Bandgap Power Devices and Applications, 2017, vol. 2017, pp. 177 - 184en_US
dc.identifier.isbn9781538631171-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33225-
dc.description.abstractGallium Nitride (GaN) based devices on Silicon (Si) substrates (GaN-on-Si) promise unmatched performance at low cost. Despite this theoretical promise, the lattice and thermal conductivity mismatch between the GaN and Si has obstructed the realization of reliable electrically graded high voltage devices. Recently, a small number of manufacturers have claimed the successful development of such devices. Panasonic and Transphorm among a few others have also made their devices available in the open market. The commercial availability of these devices, (something common only for mature technologies), proves the remarkable progress that has been achieved. In this paper, a comprehensive and experimentally derived comparison of the static performance is made between the 600 V Panasonic PGA26C09DV Gate Injected Transistor (GIT) and the 600 V Transphorm cascode TO-220 series devices. The Si 650 V Infineon SPA15N60C3 Super-Junction (S-J) provides a reference with Si technology. The Panasonic devices feature a p-GaN layer which makes them one of the first Enhancement mode (E-mode) GaN power devices on the market, whereas the Transphorm devices are Depletion-mode (D-mode) High Electron Mobility Transistors (HEMTs) cascaded with a low voltage (LV) Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Despite the Panasonic and Transphorm devices being examples of GaN-on-Si aiming for the same applications, the measurements and analysis shows that their performance is very different.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofIEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)en_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectB1505Aen_US
dc.subjectcascode GaNen_US
dc.subjectE-modeen_US
dc.subjectGaN HEMTen_US
dc.subjectpower devicesen_US
dc.subjectstatic performanceen_US
dc.titleA comprehensive comparison of the static performance of commercial GaN-on-Si devicesen_US
dc.typeBook Chapteren_US
dc.collaborationCoventry Universityen_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1109/WiPDA.2017.8170543en_US
dc.identifier.scopus2-s2.0-85046654827-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85046654827-
dc.relation.volume2017en_US
cut.common.academicyear2017-2018en_US
dc.identifier.spage177en_US
dc.identifier.epage184en_US
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_3248-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypebookPart-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Κεφάλαια βιβλίων/Book chapters
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