Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/2930| Title: | Conduction mechanisms of P3HT:PCBM solar cell |
| Authors: | Nolasco, Jairo C. Pacios, Roberto Neophytou, Marios |
| metadata.dc.contributor.other: | Νεοφύτου, Μάριος |
| Keywords: | Electric network analysis;Temperature measurements;Solar cells |
| Issue Date: | 2009 |
| Source: | Proceedings of the Spanish Conference on Electron Devices CDE, 2009, Pages 398-401 |
| Abstract: | In order to get a deeper understanding of the conduction mechanisms limiting the electrical characteristics of ITO/PEDOT:PSS/P3HT:PCBM/Al solar cells, dark current-voltage measurements at different temperatures were analyzed using a compact electrical equivalent circuit previously used in p/n junctions. Between 0.2 V and 0.6 V, the current-voltage characteristic is modeled by an exponential term which can be described by Multi-Tunneling Capture Emission process. For larger voltage, the model takes into account Space-Charge Limited process and series resistance. In addition, the model is useful to calculate the built in potential of the solar cell using only dark current- voltage-temperature measurements. |
| URI: | https://hdl.handle.net/20.500.14279/2930 |
| ISBN: | 978-142442839-7 |
| DOI: | 10.1109/SCED.2009.4800517 |
| Rights: | © 2009 IEEE |
| Type: | Book Chapter |
| Affiliation: | Mondragon University |
| Appears in Collections: | Κεφάλαια βιβλίων/Book chapters |
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