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Issue DateTitleAuthor(s)
125-Jul-20164.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan 
228-Jun-2013Gate commutated thyristor with voltage independent maximum controllable currentLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Nistor, Iulian ; Rahimo, Munaf T. ; Arnold, Martin ; Wikstroem, Tobias ; Vobecky, Jan