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Τίτλος: Stress state of embedded Si nanocrystals
Συγγραφείς: Kleovoulou, Konstantinos 
Kelires, Pantelis C. 
Major Field of Science: Natural Sciences
Field Category: Physical Sciences
Λέξεις-κλειδιά: Silicon Nitride;Superlattix;Quantum Dot
Ημερομηνία Έκδοσης: 21-Αυγ-2013
Πηγή: Physical Review B, 2013, vol. 88, no. 8
Volume: 88
Issue: 8
Περιοδικό: Physical Review B 
Περίληψη: Monte Carlo simulations shed light on the stress state of Si nanocrystals embedded in amorphous silica, unraveling and explaining its nature and origins. This is achieved by generating detailed stress maps and by calculating the stress profile as a function of size and distance between the nanocrystals. For normal oxide matrix densities, the average stress in the nanocrystal core is found to be compressive, reaching values of 3-4 GPa, in excellent agreement with experimental measurements. It drastically declines at the interface, despite the existence of several highly strained geometries. Tensile conditions prevail in nanocrystals embedded in densified silica matrices. The nanocomposites are shown to be stable, at close interdot distances, against segregation and phase separation.
URI: https://hdl.handle.net/20.500.14279/9783
ISSN: 1550235X
DOI: 10.1103/PhysRevB.88.085424
Rights: © American Physical Society
Type: Article
Affiliation: Cyprus University of Technology 
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