Παρακαλώ χρησιμοποιήστε αυτό το αναγνωριστικό για να παραπέμψετε ή να δημιουργήσετε σύνδεσμο προς αυτό το τεκμήριο:
https://hdl.handle.net/20.500.14279/9309| Τίτλος: | Composition and stress of SiGe nanostructures on curved substrates | Συγγραφείς: | Leontiou, Theodoros Kelires, Pantelis C. |
Major Field of Science: | Engineering and Technology | Field Category: | Mechanical Engineering | Λέξεις-κλειδιά: | Nanostructures;Curved substrates | Ημερομηνία Έκδοσης: | 16-Μαρ-2016 | Πηγή: | Physical Review B, 2016, vol. 93, no. 12 | Volume: | 93 | Issue: | 12 | Περιοδικό: | Physical Review B | Περίληψη: | Recent experimental studies of Ge nanoislands on silicon-on-insulator (SOI) substrates have provided a defect-free strain relaxation mechanism through the bending of the substrate. Here, using atomistic Monte Carlo simulations and analytical modeling, we couple this relaxation mechanism with interdiffusion and alloying and observe composition profiles that are completely different from those observed in flat nanoislands. Moreover, for comparable SOI and island thicknesses, intermixing can be greatly reduced and Ge content in the islands is highly preserved. | URI: | https://hdl.handle.net/20.500.14279/9309 | ISSN: | 24699969 | DOI: | 10.1103/PhysRevB.93.125307 | Rights: | © American Physical Society. | Type: | Article | Affiliation: | Frederick University Cyprus University of Technology |
| Εμφανίζεται στις συλλογές: | Άρθρα/Articles |
CORE Recommender
SCOPUSTM
Citations
3
checked on 9 Νοε 2023
WEB OF SCIENCETM
Citations
3
Last Week
0
0
Last month
0
0
checked on 1 Νοε 2023
Page view(s) 20
428
Last Week
2
2
Last month
14
14
checked on 10 Μαϊ 2024
Google ScholarTM
Check
Altmetric
Όλα τα τεκμήρια του δικτυακού τόπου προστατεύονται από πνευματικά δικαιώματα