1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Άρθρα/Articles
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33095
DC FieldValueLanguage
dc.contributor.authorAntoniou, M.-
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorBauer, F.-
dc.contributor.authorNistor, I.-
dc.contributor.authorBellini, M.-
dc.contributor.authorRahimo, M.-
dc.contributor.authorAmaratunga, G.-
dc.contributor.authorUdrea, F.-
dc.date.accessioned2024-10-15T06:55:22Z-
dc.date.available2024-10-15T06:55:22Z-
dc.date.issued2015-08-01-
dc.identifier.citationIEEE Electron Device Letters, 2015, vol. 36, iss. 8, pp. 823 - 825en_US
dc.identifier.issn07413106-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33095-
dc.description.abstractIn this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.rights© IEEEen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectInsulated Gate Bipolar Transistor (IGBT)en_US
dc.subjectsuperjunction power MOSFETen_US
dc.subjecttechnology trade-offen_US
dc.titleNovel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistorsen_US
dc.typeArticleen_US
dc.collaborationUniversity of Cambridgeen_US
dc.collaborationABB Corporate Research Center Switzerlanden_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1109/LED.2015.2433894en_US
dc.identifier.scopus2-s2.0-84937935711-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84937935711-
dc.relation.issue8en_US
dc.relation.volume36en_US
cut.common.academicyear2014-2015en_US
dc.identifier.spage823en_US
dc.identifier.epage825en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.author.orcid0000-0002-0901-0876-
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