Please use this identifier to cite or link to this item:
Title: Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications
Authors: Itskos, Grigorios 
Xristodoulou, X. 
Iliopoulos, Eleftherios 
Ladas, Spyridon 
Kennou, Stella 
Neophytou, Marios 
Choulis, Stelios A. 
Keywords: Optoelectronic applications;Interfaces (materials);Polyfluorene films
Category: Mechanical Engineering
Field: Engineering and Technology
Issue Date: 11-Feb-2013
Publisher: American Institute of Physics Inc.
Source: Applied Physics Letters, 2013, Volume 102, Issue 6, Article number 063303
DOI: 10.1063/1.4792211
Abstract: Electronic and interface properties of spin-coated poly(9,9- dioctylfluorenyl-2,7-diyl) (PFO) films on GaN have been investigated in terms of their potential for optoelectronic applications. The PFO/GaN interface was studied by photoemission spectroscopy showing a type-II energy alignment with band offsets suitable for efficient photocurrent generation. The light harvesting potential is further supported by fluorescence experiments that show evidence of photo-induced electron transfer from PFO to GaN. The impact of polymer film thickness was probed using emission anisotropy and ellipsometry, indicating the presence of an ordered planar phase of PFO. The study has implications to hybrid optoelectronic devices employing the two important materials.
ISSN: 00036951
Rights: © 2013 American Institute of Physics.
Type: Article
Appears in Collections:Άρθρα/Articles

Show full item record

Page view(s) 10

Last Week
Last month
checked on Apr 3, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.