Please use this identifier to cite or link to this item:
Title: The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics
Authors: Zhidkov, Ivan S. 
McLeod, John A. 
Kurmaev, Ernst Z. 
Korotin, Michael A. 
Kukharenko, Andrey I. 
Savva, Achilleas 
Choulis, Stelios A. 
Korotin, Dm M. 
Cholakh, Seif O. 
Keywords: Organic photovoltaic (OPV);Electronic structure;Energy gap
Category: Mechanical Engineering
Field: Engineering and Technology
Issue Date: 11-Jul-2016
Publisher: American Institute of Physics Inc.
Source: Applied Physics Letters, 2016, Volume 109, Issue 2, Article number 022108
DOI: 10.1063/1.4958892
Abstract: We study the low-temperature solution processed TiOx films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti3+ present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiOx film as an electron selective contact may increase the fraction of Ti3+ present. We provide evidence that the number of charge carriers in TiOx can be significantly varied and this might influence the performance of inverted OPVs.
ISSN: 00036951
Rights: © 2016 Author(s).
Type: Article
Appears in Collections:Άρθρα/Articles

Files in This Item:
File Description SizeFormat
coulis, savva.pdf762.69 kBAdobe PDFView/Open
Show full item record

Page view(s) 5

Last Week
Last month
checked on Jun 12, 2019

Download(s) 20

checked on Jun 12, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.