Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7724
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dc.contributor.authorChoulis, Stelios A.en
dc.contributor.authorHosea, Thomas Jeff Cockburnen
dc.contributor.authorKlar, Peter J.en
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-06T16:54:12Zen
dc.date.accessioned2013-05-17T05:22:19Z-
dc.date.accessioned2015-12-02T09:54:31Z-
dc.date.available2013-03-06T16:54:12Zen
dc.date.available2013-05-17T05:22:19Z-
dc.date.available2015-12-02T09:54:31Z-
dc.date.issued2001en
dc.identifier.citationApplied physics letters, 2001, Volume 79, Issue 26, Pages 4277-4279en
dc.identifier.issn0003-6951 (print)en
dc.identifier.issn1077-3118 (online)en
dc.identifier.urihttp://ktisis.cut.ac.cy/handle/10488/7724en
dc.description.abstractWe report electromodulated reflectance studies on the band structure of a dilute-N (∼1%) (GaIn)(NAs)/GaAs/AlAs vertical-cavity surface-emitting laser (VCSEL), as a function of temperature and incidence angle. The wide range of operating temperatures observed for this type of VCSEL (∼360 K here) is due to the reduced temperature variation of the effective band gap of the active (GaIn)(NAs) quantum wells, and broad gain. By comparing lasing properties and band structure we argue that the gain broadening is not simply due to alloy disorder but arises from a recently-proposed intrinsic property of (GaIn)(NAs): the existence of different band gaps for the five possible nearest-neighbor configurations of the N substitutional impurityen
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rights© 2001 American Institute of Physicsen
dc.subjectGallium arsenideen
dc.subjectIndium compoundsen
dc.subjectQuantum wellsen
dc.subjectInfrared spectraen
dc.titleInfluence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasersen
dc.typeArticleen
dc.affiliationUniversity of Surreyen
dc.identifier.doi10.1063/1.1424464en
dc.dept.handle123456789/54en
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.languageiso639-1other-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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