Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7724
Title: Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
Authors: Choulis, Stelios A. 
Hosea, Thomas Jeff Cockburn 
Klar, Peter J. 
Keywords: Gallium arsenide;Indium compounds;Quantum wells;Infrared spectra
Issue Date: 2001
Publisher: American Institute of Physics
Source: Applied physics letters, 2001, Volume 79, Issue 26, Pages 4277-4279
Abstract: We report electromodulated reflectance studies on the band structure of a dilute-N (∼1%) (GaIn)(NAs)/GaAs/AlAs vertical-cavity surface-emitting laser (VCSEL), as a function of temperature and incidence angle. The wide range of operating temperatures observed for this type of VCSEL (∼360 K here) is due to the reduced temperature variation of the effective band gap of the active (GaIn)(NAs) quantum wells, and broad gain. By comparing lasing properties and band structure we argue that the gain broadening is not simply due to alloy disorder but arises from a recently-proposed intrinsic property of (GaIn)(NAs): the existence of different band gaps for the five possible nearest-neighbor configurations of the N substitutional impurity
URI: http://ktisis.cut.ac.cy/handle/10488/7724
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.1424464
Rights: © 2001 American Institute of Physics
Type: Article
Appears in Collections:Άρθρα/Articles

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