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|Title:||Equilibrium alloy properties by direct simulation: oscillatory segregation at the si-ge(100) 2×1 surface||Authors:||Tersoff, Jerry
Kelires, Pantelis C.
|Major Field of Science:||Engineering and Technology||Field Category:||Mechanical Engineering||Keywords:||Alloys||Issue Date:||1989||Source:||Physical Review Letters,1989, Vol. 63, Iss. 11, Pp. 1164-1167||Volume:||63||Issue:||11||Start page:||1164||End page:||1167||Journal:||Physical review letters||Abstract:||We study surface and bulk equilibrium in Si-Ge alloys by direct simulation. The composition at a reconstructed (100) surface varies with depth in a complex oscillatory way. Lateral ordering occurs even in the fourth layer, driven by the local stress field. The bulk phase diagram is well described by regular solution theory.||URI:||http://ktisis.cut.ac.cy/handle/10488/7712||ISSN:||1079-7114||DOI:||10.1103/PhysRevLett.63.1164||Rights:||© The American Physical Society.||Type:||Article||Affiliation:||Thomas J. Watson Research Center, New York||Affiliation :||T.J. Watson Research Center|
|Appears in Collections:||Άρθρα/Articles|
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