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|Title:||Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies||Authors:||Choulis, Stelios A.
Weinstein, Bernard A.
Hosea, Thomas Jeff Cockburn
|Keywords:||Pressure;Temperature;Nitrogen||Issue Date:||2001||Publisher:||Wiley||Source:||Physica status solidi (B) Basic research, 2001, Volume 223, Issue 1, Pages 151-156||Abstract:||We report photo-modulated reflectance studies under applied pressure and variable temperature, and related calculations, that probe the influence of N-related resonant anti-bonding states on the electronic structure of dilute III–N–V quantum wells (QWs). Three InyGa1—yAs1—xNx/GaAs multiple QW samples with N contents of 0–2.5% are investigated up to 85 kbar at 300 K, and for 300–10 K at 1 atm. While the temperature dependence is only minimally affected by the N content, the pressure shifts of the intersubband transition energies depend significantly on the percentage of N. The linear pressure coefficients are much smaller than those of the InGaAs band gap. A ten-band k · p model is in broad accord with the observed pressure dependence; the predicted non-linear shift is somewhat larger than measured||URI:||http://ktisis.cut.ac.cy/handle/10488/7691||ISSN:||0370-1972 (print)
|DOI:||10.1002/1521-3951(200101)223:1<151::AID-PSSB151>3.0.CO;2-E||Rights:||© 2001 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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