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|Title:||Glassy quasithermal distribution of local geometries and defects in quenched amorphous silicon||Authors:||Tersoff, Jerry
Kelires, Pantelis C.
|Major Field of Science:||Engineering and Technology||Field Category:||Mechanical Engineering||Keywords:||Geometry;Silicon;Temperature;Energy||Issue Date:||1988||Source:||Physical Review Letters, 1988, Vol. 61, Iss.5, Pp.562-565||Volume:||61||Issue:||5||Start page:||562||End page:||565||Journal:||Physical review letters||Abstract:||Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzmann-like distribution of local geometries, corresponding to a "glass temperature" of roughly 700 K. The resulting tetrahedral network exhibits native defects, threefold- and fivefold-coordinated atoms, which have mean formation energies of 0.6 and 0.3 eV, respectively, and which are apparently mobile even at fairly low temperatures. These results are obtained by a novel approach to the analysis, and are relatively insensitive to the empirical interatomic potential used in the simulations.||URI:||http://ktisis.cut.ac.cy/handle/10488/7678||ISSN:||1079-7114||DOI:||10.1103/PhysRevLett.61.562||Rights:||© The American Physical Society.||Type:||Article||Affiliation:||Thomas J. Watson Research Center, New York||Affiliation :||T.J. Watson Research Center|
|Appears in Collections:||Άρθρα/Articles|
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