Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7678
Title: Glassy quasithermal distribution of local geometries and defects in quenched amorphous silicon
Authors: Tersoff, Jerry 
Kelires, Pantelis C. 
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Geometry;Silicon;Temperature;Energy
Issue Date: 1988
Source: Physical Review Letters, 1988, Vol. 61, Iss.5, Pp.562-565
Volume: 61
Issue: 5
Start page: 562
End page: 565
Journal: Physical review letters 
Abstract: Simulations of amorphous silicon formed by quenching of the liquid indicate that a-Si has a Boltzmann-like distribution of local geometries, corresponding to a "glass temperature" of roughly 700 K. The resulting tetrahedral network exhibits native defects, threefold- and fivefold-coordinated atoms, which have mean formation energies of 0.6 and 0.3 eV, respectively, and which are apparently mobile even at fairly low temperatures. These results are obtained by a novel approach to the analysis, and are relatively insensitive to the empirical interatomic potential used in the simulations.
URI: http://ktisis.cut.ac.cy/handle/10488/7678
ISSN: 1079-7114
DOI: 10.1103/PhysRevLett.61.562
Rights: © The American Physical Society.
Type: Article
Affiliation: Thomas J. Watson Research Center, New York 
Affiliation : T.J. Watson Research Center 
Appears in Collections:Άρθρα/Articles

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