Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7677
Title: Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies
Authors: Choulis, Stelios A. 
Hosea, Thomas Jeff Cockburn 
Tomić, Stanko S. 
Keywords: Quantum wells;Gallium;Indium;Hydrostatic pressure
Category: Chemical Sciences
Field: Natural Sciences
Issue Date: 2002
Publisher: American Physical Society
Source: Physical review B - Condensed matter and materials physics, 2002, Volume 66, Issue 16, Pages 1-9
Journal: Physical review B 
Abstract: We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa1-yAs1-xNx/GaAs multiple quantum well samples as functions of hydrostatic pressure (at room temperature) and temperature (at ambient pressure). The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k⋅p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys
URI: http://ktisis.cut.ac.cy/handle/10488/7677
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.66.165321
Rights: © 2002 The American Physical Society
Type: Article
Appears in Collections:Άρθρα/Articles

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