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|Title:||Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy||Authors:||Choulis, Stelios A.
Hosea, Thomas Jeff Cockburn
Ghosh, Sandip Kumar
|Keywords:||Optical pumping;Erbium;Spectroscopy;Gallium arsenide;Indium compounds||Issue Date:||2003||Publisher:||IEEE Xplore||Source:||IEEE photonics technology letters, 2003, Volume 15, Issue 8, Pages 1026-1028||Abstract:||We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample||URI:||http://ktisis.cut.ac.cy/handle/10488/7661||ISSN:||1041-1135||DOI:||10.1109/LPT.2003.815364||Rights:||© IEEE||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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