Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7627
Title: Suppression of intermixing in strain-relaxed epitaxial layers
Authors: Leontiou, Theodoros 
Tersoff, Jerry 
Kelires, Pantelis C. 
Major Field of Science: Engineering and Technology
Keywords: Computer simulation;Continuum mechanics;Germanium;Indium arsenide;Gallium alloys
Issue Date: 3-Dec-2010
Source: Physical Review Letters, 2010, vol. 105, no. 23
Volume: 105
Issue: 23
Journal: Physical Review Letters 
Abstract: Misfit strain plays a crucial role in semiconductor heteroepitaxy, driving alloy intermixing or the introduction of dislocations. Here we predict a strong coupling between these two modes of strain relaxation, with unexpected consequences. Specifically, strain relaxation by dislocations can suppress intermixing between the heterolayer and the substrate. Monte Carlo simulations and continuum modeling show that the suppression, though not absolute, can be surprisingly large, even at high temperatures. The effect is strongest for a large misfit (e.g., InAs on GaAs) or for thin substrates (e.g., Ge on silicon on insulator).
ISSN: 1079-7114
DOI: 10.1103/PhysRevLett.105.236104
Rights: © The American Physical Society
Type: Article
Affiliation : Cyprus University of Technology 
T.J. Watson Research Center 
Appears in Collections:Άρθρα/Articles

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