Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7618
DC FieldValueLanguage
dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorChoong, Vi-En-
dc.contributor.authorPatwardhan, Aditee-
dc.contributor.otherΧούλης, Στέλιος Α.-
dc.date.accessioned2013-03-05T10:17:19Zen
dc.date.accessioned2013-05-17T05:22:53Z-
dc.date.accessioned2015-12-02T10:12:48Z-
dc.date.available2013-03-05T10:17:19Zen
dc.date.available2013-05-17T05:22:53Z-
dc.date.available2015-12-02T10:12:48Z-
dc.date.issued2006-04-10-
dc.identifier.citationAdvanced functional materials, 2006, vol. 16, no. 8, pp. 1075-1080en_US
dc.identifier.issn1616-301X-
dc.description.abstractThe performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devicesen_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.publisherWileyen
dc.relation.ispartofAdvanced Functional Materialsen_US
dc.rights© WILEY-VCH Verlag GmbH & Co. KGaAen_US
dc.subjectConducting polymersen_US
dc.subjectLight emitting diodesen_US
dc.subjectOrganic electronicsen_US
dc.subjectPolyfluorenesen_US
dc.titleInterface modification to improve hole-injection properties in organic electronic devicesen_US
dc.typeArticleen_US
dc.affiliationOsram Opto Semiconductors, Inc.en
dc.collaborationOsram Opto Semiconductors, Inc.en_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1002/adfm.200500443en_US
dc.dept.handle123456789/54en
dc.relation.issue8en_US
dc.relation.volume16en_US
cut.common.academicyear2006-2007en_US
dc.identifier.spage1075en_US
dc.identifier.epage1080en_US
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
crisitem.journal.journalissn1616-3028-
crisitem.journal.publisherWiley-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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