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|Title:||Interface modification to improve hole-injection properties in organic electronic devices||Authors:||Choulis, Stelios A.
|Major Field of Science:||Engineering and Technology||Keywords:||Conducting polymers;Light emitting diodes;Organic electronics;Polyfluorenes||Issue Date:||10-Apr-2006||Source:||Advanced functional materials, 2006, vol. 16, no. 8, pp. 1075-1080||Volume:||16||Issue:||8||Start page:||1075||End page:||1080||Journal:||Advanced Functional Materials||Abstract:||The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices||ISSN:||1616-301X||DOI:||10.1002/adfm.200500443||Rights:||© WILEY-VCH Verlag GmbH & Co. KGaA||Type:||Article||Affiliation:||Osram Opto Semiconductors, Inc.||Affiliation :||Osram Opto Semiconductors, Inc.|
|Appears in Collections:||Άρθρα/Articles|
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