Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7618
Title: Interface modification to improve hole-injection properties in organic electronic devices
Authors: Choulis, Stelios A. 
Choong, Vi-En 
Patwardhan, Aditee 
Major Field of Science: Engineering and Technology
Keywords: Conducting polymers;Light emitting diodes;Organic electronics;Polyfluorenes
Issue Date: 10-Apr-2006
Source: Advanced functional materials, 2006, vol. 16, no. 8, pp. 1075-1080
Volume: 16
Issue: 8
Start page: 1075
End page: 1080
Journal: Advanced Functional Materials 
Abstract: The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N-(4- butylphenyl)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices
ISSN: 1616-301X
DOI: 10.1002/adfm.200500443
Rights: © WILEY-VCH Verlag GmbH & Co. KGaA
Type: Article
Affiliation: Osram Opto Semiconductors, Inc. 
Affiliation : Osram Opto Semiconductors, Inc. 
Appears in Collections:Άρθρα/Articles

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