Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7423
Title: Determination of gap defect states in organic bulk heterojunction solar cells from capacitance measurements
Authors: Boix, Pablo P. 
García-Belmonte, Germà 
Muñecas, Udane 
Neophytou, Marios 
Waldauf, Christoph 
Pacios, Roberto 
Major Field of Science: Engineering and Technology
Field Category: Environmental Engineering
Keywords: Heterojunctions;Capacitance meters;Solar cells
Issue Date: 7-Dec-2009
Source: Applied Physics Letters, 2009, vol. 95, no. 23, pp. 1-4
Volume: 95
Issue: 23
Start page: 1
End page: 4
Journal: Applied Physics Letters 
Abstract: Energy distributions [density-of-states (DOS)] of defects in the effective band gap of organic bulk heterojunctions are determined by means of capacitance methods. The technique consists of calculating the junction capacitance derivative with respect to the angular frequency of the small voltage perturbation applied to thin film poly(3-hexylthiophene) (P3HT) [6,6]-phenyl C61 -butyric acid methyl ester (PCBM) solar cells. The analysis, which was performed on blends of different composition, reveals the presence of defect bands exhibiting Gaussian shape located at E≈0.38 eV above the highest occupied molecular orbital level of the P3HT. The disorder parameter σ, which accounts for the broadening of the Gaussian DOS, lies within the range of 49-66 meV. The total density of defects results of order 1016 cm-3.
URI: http://ktisis.cut.ac.cy/handle/10488/7423
ISSN: 1077-3118
DOI: 10.1063/1.3270105
Rights: © American Institute of Physics
Type: Article
Affiliation : Universitat Jaume I 
IKERLAN-IK4 
Cyprus University of Technology 
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