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|Title:||Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements||Authors:||Kalli, Kyriacos
Othonos, Andreas S.
|Major Field of Science:||Engineering and Technology||Field Category:||Electrical Engineering - Electronic Engineering - Information Engineering||Keywords:||Semiconductor doping;Silicon;Surface contamination;Nondestructive testing;Photothermal spectroscopy||Issue Date:||Sep-1999||Source:||Journal of Applied Physics,1999, vol. 86, no. 6, pp. 3064-3067||Volume:||86||Issue:||6||Start page:||3064||End page:||3067||Journal:||Journal of Applied Physics||Abstract:||Metal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.||ISSN:||1089-7550||DOI:||10.1063/1.371168||Rights:||© American Institute of Physics.||Type:||Article||Affiliation :||University of Cyprus
LETI (CEA - Technologies Avancées)
|Appears in Collections:||Άρθρα/Articles|
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