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|Title:||Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements||Authors:||Kalli, Kyriacos
Othonos, Andreas S.
|Keywords:||Semiconductor doping;Silicon;Surface contamination;Nondestructive testing;Photothermal spectroscopy||Category:||Electrical Engineering - Electronic Engineering - Information Engineering||Field:||Engineering and Technology||Issue Date:||Sep-1999||Publisher:||AIP American Institute of Physics Inc.||Source:||Journal of Applied Physics,1999, vol. 86, no. 6, pp. 3064-3067||Abstract:||Metal contaminated silicon wafers were examined using nondestructive methods based on photothermal radiometry. This approach relies on measuring the blackbody radiation emitted from a material excited by a modulated laser source. Information is recovered regarding the electronic and thermal properties of the semiconductor as a function of laser modulation frequency. Data collected as a function of modulation frequency and time show clear distinctions between different samples. The sensitivity to different forms of metallic contamination is examined.||ISSN:||0021-8979 (print)
|DOI:||10.1063/1.371168||Rights:||© 1999 American Institute of Physics.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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