Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/7369
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dc.contributor.authorAbadias, Gregory-
dc.contributor.authorDub, Sergey N.-
dc.contributor.authorKoutsokeras, Loukas E.-
dc.date.accessioned2013-02-22T14:05:01Zen
dc.date.accessioned2013-05-17T05:22:32Z-
dc.date.accessioned2015-12-02T09:27:25Z-
dc.date.available2013-02-22T14:05:01Zen
dc.date.available2013-05-17T05:22:32Z-
dc.date.available2015-12-02T09:27:25Z-
dc.date.issued2010-07-
dc.identifier.citationJournal of vacuum science and technology A, 2010, vol. 28, no. 4, pp. 541-551en_US
dc.identifier.issn1520-8559-
dc.description.abstractTernary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar- N2 plasma discharges at 300 °C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti1-x Zrx N and Ti 1-y Tay N solid solutions with the Na-Cl (B1 -type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti1-y Ta y N films exhibited superior mechanical properties to Ti 1-x Zrx N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity ρ ∼65 μΩ cm being obtained for pure ZrN, while for Ti1-y Tay N films a minimum was observed at y∼0.3. The evolution of the different film properties is discussed based on microstructrural investigationsen_US
dc.language.isoenen_US
dc.publisherAmerican Vacuum Societyen
dc.relation.ispartofJournal of Vacuum Science & Technology Aen_US
dc.rights© American Vacuum Societyen_US
dc.subjectTitanium nitrideen_US
dc.subjectMagnetron sputteringen_US
dc.subjectIon platingen_US
dc.titleReactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti–Zr–N and Ti–Ta–Nen_US
dc.typeArticleen_US
dc.affiliationUniversity of Ioanninaen
dc.collaborationUniversity Poitiersen_US
dc.collaborationUniversity of Ioanninaen_US
dc.collaborationNAS of Ukraineen_US
dc.collaborationKharkiv Institute of Physics and Technologyen_US
dc.collaborationCEMHTIen_US
dc.subject.categoryMaterials Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryGreeceen_US
dc.countryUkraineen_US
dc.countryFranceen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1116/1.3426296en_US
dc.dept.handle123456789/54en
dc.relation.issue4en_US
dc.relation.volume28en_US
cut.common.academicyear2010-2011en_US
dc.identifier.spage541en_US
dc.identifier.epage551en_US
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
crisitem.journal.journalissn0734-2101-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-4143-0085-
crisitem.author.parentorgFaculty of Engineering and Technology-
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