Please use this identifier to cite or link to this item:
|Title:||Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti–Zr–N and Ti–Ta–N||Authors:||Abadias, Gregory
Dub, Sergey N.
Koutsokeras, Loukas E.
|Major Field of Science:||Engineering and Technology||Field Category:||Materials Engineering||Keywords:||Titanium nitride;Magnetron sputtering;Ion plating||Issue Date:||Jul-2010||Source:||Journal of vacuum science and technology A, 2010, vol. 28, no. 4, pp. 541-551||Volume:||28||Issue:||4||Start page:||541||End page:||551||Journal:||Journal of Vacuum Science & Technology A||Abstract:||Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar- N2 plasma discharges at 300 °C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti1-x Zrx N and Ti 1-y Tay N solid solutions with the Na-Cl (B1 -type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti1-y Ta y N films exhibited superior mechanical properties to Ti 1-x Zrx N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity ρ ∼65 μΩ cm being obtained for pure ZrN, while for Ti1-y Tay N films a minimum was observed at y∼0.3. The evolution of the different film properties is discussed based on microstructrural investigations||ISSN:||1520-8559||DOI:||10.1116/1.3426296||Rights:||© American Vacuum Society||Type:||Article||Affiliation:||University of Ioannina||Affiliation :||University Poitiers
University of Ioannina
NAS of Ukraine
Kharkiv Institute of Physics and Technology
|Appears in Collections:||Άρθρα/Articles|
checked on Jun 15, 2021
WEB OF SCIENCETM
checked on Apr 22, 2021
Page view(s) 50273
checked on Jun 16, 2021
Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.