Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/19209
Title: Laser induced ultrafast combustion synthesis of solution-based AlO<inf>: X </inf>for thin film transistors
Authors: Carlos, Emanuel 
Dellis, Spilios 
Kalfagiannis, Nikolaos 
Koutsokeras, Loukas E. 
Koutsogeorgis, Demosthenes C. 
Branquinho, Rita 
Martins, Rodrigo 
Fortunato, Elvira 
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Alumina;Aluminum oxide;Combustion synthesis;Curing;Drying;Electric insulators;Electronics industry;Entertainment industry;Excimer lasers;Flexible electronics;Laser materials processing;Oxide films;Power transistors;Semiconductor lasers;Temperature;Thin film circuits;Thin films
Issue Date: 14-May-2020
Source: Journal of Materials Chemistry C, 2020, vol. 8, iss. 18, pp. 6176-6184
Volume: 8
Issue: 18
Start page: 6176
End page: 6184
Journal: Journal of Materials Chemistry C 
Abstract: Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature (≤150 °C) via combustion synthesis triggered by ELA, for oxide thin film transistors (TFTs) suitable for manufacturing flexible electronics. The study showed that combining ELA and combustion synthesis leads to an improvement in the dielectric thin film's densification in a shorter time (≤15 min). Optimized dielectric layers were obtained combining a short drying cycle at 150 °C followed by ELA treatment. High breakdown voltage (4 MV cm-1) and optimal dielectric constant (9) was attained. In general, TFT devices comprising the AlOx fabricated with a drying cycle of 15 min followed by ELA presented great TFT properties, a high saturation mobility (20.4 ± 0.9 cm2 V-1 s-1), a small subthreshold slope (0.10 ± 0.01 V dec-1) and a turn-on voltage ∼0 V. ELA is shown to provide excellent quality solution-based high-κ AlOx dielectric, that surpass other methods, like hot plate annealing and deep ultraviolet (DUV) curing. The results achieved are promising and expected to be of high value to the printed electronic industry due to the ultra-fast film densification and the surface/area selective nature of ELA.
Description: Funding text This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT – Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. European Community H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758. E. Carlos acknowledges FCT-MCTES for a doctoral grant (Grant SFRH/BD/116047/2016) and IDS-FunMat-INNO project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015. E. Fortunato acknowledges the ERC AdG grant 787410 from the project DIGISMART.
URI: https://ktisis.cut.ac.cy/handle/10488/19209
ISSN: 2050-7534
DOI: 10.1039/d0tc01204a
Rights: © The Royal Society of Chemistry
Type: Article
Affiliation : Universidade Nova de Lisboa 
Nottingham Trent University 
Cyprus University of Technology 
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