Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/18181
Title: All-solution based device engineering of multilayer polymeric photodiodes: Minimizing dark current
Authors: Keivanidis, Panagiotis E. 
Khong, Siong Hee 
Ho, Peter K.H. 
Greenham, Neil C. 
Friend, Richard H. 
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Photodetectors;Electric currents;Photodiodes;Quantum efficiency;Materials;Photovoltaics;Spin coating;Short circuit;Conducting polymers;Heterostructures
Issue Date: 11-May-2009
Source: Applied Physics Letters, 2009, vol. 94, no. 17
Volume: 94
Issue: 17
Journal: Applied Physics Letters 
Abstract: We present photodiodes fabricated with several layers of semiconducting polymers, designed to show low dark current under reverse bias operation. Dark current minimization is achieved through the presence of additional polymer layers that reduce charge carrier injection in reverse bias, when in contact with the device electrodes. All polymer layers are deposited via spin coating and are photocross-linked for allowing further polymer layer deposition, by using a bis-fluorinated phenyl-azide photocross-linking agent. Dark current density values as low as 40 pA/ mm2 are achieved with a corresponding external quantum efficiency (EQE) of 20% at a reverse bias of -0.5 V when an electron-blocking layer is used. Dark current is further reduced when both an electron- and a hole-blocking layer are used but the EQE falls significantly. © 2009 American Institute of Physics.
URI: https://ktisis.cut.ac.cy/handle/10488/18181
ISSN: 1077-3118
DOI: 10.1063/1.3120547
Rights: © American Institute of Physics
Type: Article
Affiliation : Cavendish Laboratory 
National University of Singapore 
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