Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/18176
Title: X-ray stability and response of polymeric photodiodes for imaging applications
Authors: Keivanidis, Panagiotis E. 
Greenham, Neil C. 
Sirringhaus, Henning 
Friend, Richard H. 
Blakesley, James C. 
Speller, Robert 
Campoy-Quiles, Mariano 
Agostinelli, Tiziano 
Bradley, Donal D.C. 
Nelson, Jenny 
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Issue Date: 28-Jan-2008
Source: Applied Physics Letters, 2008, vol. 92, iss. 2
Volume: 92
Issue: 2
Journal: Applied Physics Letters 
Abstract: The x-ray stability of photodiodes made of poly(9,9-di- n -octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di- n -octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]: perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. © 2008 American Institute of Physics.
ISSN: 1077-3118
DOI: 10.1063/1.2834364
Rights: © AIP
Type: Article
Affiliation : Cavendish Laboratory 
University College London 
Imperial College 
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