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|Title:||X-ray stability and response of polymeric photodiodes for imaging applications||Authors:||Keivanidis, Panagiotis E.
Greenham, Neil C.
Friend, Richard H.
Blakesley, James C.
Bradley, Donal D.C.
|Major Field of Science:||Engineering and Technology||Field Category:||Mechanical Engineering||Issue Date:||28-Jan-2008||Source:||Applied Physics Letters, 2008, vol. 92, iss. 2||Volume:||92||Issue:||2||Journal:||Applied Physics Letters||Abstract:||The x-ray stability of photodiodes made of poly(9,9-di- n -octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di- n -octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]: perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. © 2008 American Institute of Physics.||ISSN:||1077-3118||DOI:||10.1063/1.2834364||Rights:||© AIP||Type:||Article||Affiliation :||Cavendish Laboratory
University College London
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