Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/14144
Title: Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p-i-n Perovskite Solar Cells
Authors: Schwingenschlögl, Udo 
De Wolf, Stefaan 
Laquai, Frédéric 
Aydin, Erkan 
Troughton, Joel 
Neophytou, Marios 
Baran, Derya 
De Bastiani, Michele 
Ugur, Esma 
Sajjad, Muhammad 
Alzahrani, Areej 
Keywords: Plastic optical fibers;Microstructured polymer;Bragg gratings
Category: Mechanical Engineering;Materials Engineering
Field: Engineering and Technology
Issue Date: 26-Nov-2018
Source: ACS Applied Energy Materials, 2018, vol. 1, no. 11, pp. 6227-6233
Journal: ACS Applied Energy Materials 
Abstract: Nickel oxide (NiO x ) is a promising hole transport layer (HTL) for perovskite solar cells (PSCs), as it combines good chemical stability, high broadband optical transparency, and a high work function. Excellent power conversion efficiencies (PCEs) have already been reported using solution-processed NiO x . However, solution-based techniques usually require high-temperature postannealing to achieve the required HTL properties of NiO x , which jeopardizes its use for many applications, such as monolithic tandem solar cells. To resolve this issue, we developed room-temperature-sputtered NiO x and demonstrated p-i-n PSCs with 17.6% PCE (with negligible hysteresis), which are comparable to the best PSCs using sputtered and annealed NiO x without heteroatom doping. Through detailed characterization and density functional theory (DFT) analysis, we explored the electrical and optical properties of the obtained NiO x films and find that they are strongly linked with the specific defect chemistry of this material. Finally, in view of its use in perovskite/silicon tandem solar cells, we find that direct sputtering on random-pyramid textured silicon wafers results in highly conformal NiO x films.
ISSN: 2574-0962
DOI: 10.1021/acsaem.8b01263
Collaboration : Cyprus University of Technology
King Abdullah University of Science and Technology
Rights: © American Chemical Society.
Type: Article
Appears in Collections:Άρθρα/Articles

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