Please use this identifier to cite or link to this item:
|Title:||Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors||Authors:||Sirringhaus, Henning
McNeill, Christopher R.
Cryer, Samuel J.
|Major Field of Science:||Engineering and Technology||Field Category:||Mechanical Engineering;Materials Engineering||Keywords:||CH cyclization;high-mobility;IDT;IDTT;organic field-effect transistors (OFETs);TIF||Issue Date:||27-Sep-2017||Source:||Advanced Materials, 2017, vol. 29, no. 36||Volume:||29||Issue:||36||Journal:||Advanced Materials||Abstract:||© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.||ISSN:||0935-9648||DOI:||10.1002/adma.201702523||Rights:||© WILEY||Type:||Article||Affiliation :||King Abdullah University of Science and Technology
Imperial College London
University of Cambridge
BASF Schweiz AG
Cyprus University of Technology
|Appears in Collections:||Άρθρα/Articles|
checked on Sep 14, 2021
WEB OF SCIENCETM
checked on Apr 22, 2021
checked on Sep 21, 2021
Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.