Please use this identifier to cite or link to this item: https://ktisis.cut.ac.cy/handle/10488/14105
Title: Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors
Authors: Sirringhaus, Henning 
Zhang, Weimin 
Nikolka, Mark 
Hurhangee, Michael 
Abdi-Jalebi, Mojtaba 
McCulloch, Iain
Chen, Hu 
Hayoz, Pascal 
Harkin, David 
McNeill, Christopher R. 
Kirkus, Mindaugas 
Neophytou, Marios 
Cryer, Samuel J. 
Keywords: CH cyclization;high-mobility;IDT;IDTT;organic field-effect transistors (OFETs);TIF
Category: Mechanical Engineering;Materials Engineering
Field: Engineering and Technology
Issue Date: 27-Sep-2017
Source: Advanced Materials, Volume 29, Issue 36, 27 September 2017, Article number 1702523
Abstract: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.
URI: https://ktisis.cut.ac.cy/handle/10488/14105
ISSN: 09359648
DOI: 10.1002/adma.201702523
Type: Article
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