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|Title:||Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates||Authors:||Kelaidis, N.
Krontiras, Christoforos A.
Georga, Stavroula N.
Kellerman, Bruce K.
Seacrist, Mike R.
|Keywords:||Strained-Silicon;Oxidation;Thermal budget;Oxynitridation||Issue Date:||2008||Publisher:||Elsevier B.V.||Source:||Thin Solid Films. Volume 517, Issue 1, 3 November 2008, Pages 350-352||Abstract:||In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors was studied. Strained-Si/Si1 − xGex/Si substrates of two different strain levels (10% and 22% Ge content) were oxidized within the temperature range of 800 °C to 900 °C for various time intervals. Capacitance-Voltage measurements reveal that the response of the MOS capacitors depends mainly upon two factors: a) the extend of the s-Si layer oxidation, i.e. the remaining s-Si thickness and b) the duration of the post-oxidation annealing in inert ambient. Both factors influence the interfacial properties of the structures. Additional oxidation experiments in N2O ambient indicate a significant influence of the process conditions on the quality of the oxidized structures.||URI:||http://ktisis.cut.ac.cy/handle/10488/1117||ISSN:||0040-6090||DOI:||http://dx.doi.org/10.1016/j.tsf.2008.08.111||Rights:||© 2008 Elsevier B.V.||Type:||Article|
|Appears in Collections:||Άρθρα/Articles|
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