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Issue DateTitleAuthor(s)
15-Aug-20243.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State ResistanceMelnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina 
22024The First Optimisation of a 16 kV 4H-SiC N-Type IGCTQin, Ze Cao ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Antoniou, Marina ; Mawby, Phil Andrew ; Lophitis, Neophytos 
31-Jan-2023Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR Termination Designs and AnalysisMelnyk, Kyrylo ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Cao, Quize ; Lophitis, Neophytos ; Antoniou, Marina 
4Sep-2022The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristorCao, Qinze ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Zhang, Luyang ; Baker, Guy ; Antoniou, Marina ; Lophitis, Neophytos