Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/4349
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Leontiou, Theodoros | - |
dc.contributor.author | Tersoff, Jerry | - |
dc.contributor.author | Kelires, Pantelis C. | - |
dc.date.accessioned | 2013-03-05T10:25:13Z | en |
dc.date.accessioned | 2013-05-17T10:30:30Z | - |
dc.date.accessioned | 2015-12-09T12:07:56Z | - |
dc.date.available | 2013-03-05T10:25:13Z | en |
dc.date.available | 2013-05-17T10:30:30Z | - |
dc.date.available | 2015-12-09T12:07:56Z | - |
dc.date.issued | 2010-12-03 | - |
dc.identifier.citation | Physical Review Letters, 2010, vol. 105, no. 23 | en_US |
dc.identifier.issn | 10797114 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/4349 | - |
dc.description.abstract | Misfit strain plays a crucial role in semiconductor heteroepitaxy, driving alloy intermixing or the introduction of dislocations. Here we predict a strong coupling between these two modes of strain relaxation, with unexpected consequences. Specifically, strain relaxation by dislocations can suppress intermixing between the heterolayer and the substrate. Monte Carlo simulations and continuum modeling show that the suppression, though not absolute, can be surprisingly large, even at high temperatures. The effect is strongest for a large misfit (e.g., InAs on GaAs) or for thin substrates (e.g., Ge on silicon on insulator). | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Physical Review Letters | en_US |
dc.rights | © The American Physical Society | en_US |
dc.subject | Computer simulation | en_US |
dc.subject | Continuum mechanics | en_US |
dc.subject | Germanium | en_US |
dc.subject | Indium arsenide | en_US |
dc.subject | Gallium alloys | en_US |
dc.title | Suppression of intermixing in strain-relaxed epitaxial layers | en_US |
dc.type | Article | en_US |
dc.collaboration | Cyprus University of Technology | en_US |
dc.collaboration | T.J. Watson Research Center | en_US |
dc.journals | Subscription | en_US |
dc.review | peer reviewed | - |
dc.country | Cyprus | en_US |
dc.country | United States | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1103/PhysRevLett.105.236104 | en_US |
dc.dept.handle | 123456789/141 | en |
dc.relation.issue | 23 | en_US |
dc.relation.volume | 105 | en_US |
cut.common.academicyear | 2010-2011 | en_US |
item.fulltext | No Fulltext | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | article | - |
item.languageiso639-1 | en | - |
crisitem.journal.journalissn | 1079-7114 | - |
crisitem.journal.publisher | American Physical Society | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0268-259X | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Appears in Collections: | Άρθρα/Articles |
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